(China (Mainland))
Product Summary
The M29W128FL-70N6F is a 128 Mbit (16Mb x8 or 8Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations of the M29W128FL-70N6F can be performed using a single low voltage (2.7 to 3.6V) supply. At Power-up the memories default to Read mode. The M29W128FL-70N6F is divided into 256 thirty-two KWord (sixty-four KByte) uniform blocks. Program and Erase commands are written to the Command Interface of the memory. An onchip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Parametrics
M29W128FL-70N6F absolute maximum ratings: (1)Supply Voltage VCC: 9V, PVCC: 14V; (2)Input Voltage IFB, IMAX : –0.3V to 14V; (3)SENSE+, SENSE–, FB, SHDN, FREQSET: –0.3V to VCC + 0.3V; (4)Junction Temperature: 125℃; (5)Operating Temperature Range: –40℃ to 85℃; (6)Storage Temperature Range: –65℃ to 150℃; (7)Lead Temperature (Soldering, 10 sec): 300℃.
Features
M29W128FL-70N6F features: (1)Unlock Bypass Program – Faster Production/Batch Programming; (2)Common Flash Interface – 64 bit Security Code; (3)100,000 Program/Erase cycles per block; (4)Low power consumption – Standby and Automatic Standby; (5)Hardware Block Protection – VPP/WP pin for fast program and write protect of the highest (M29W128FH)or lowest block (M29W128FL); (6)Extended Memory Block: Extra block used as security block or to store additional information; (7)Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read, – VPP =12V for Fast Program (optional); (8)Asynchronous Random/Page Read Page Width: 8 Words/16 Bytes, Page Access: 25, 30ns, Random Access: 60, 70ns.
Diagrams
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