(China (Mainland))
Product Summary
The STB55NF06L is a Power Mosfet. The STB55NF06L is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parametrics
STB55NF06L absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 60 V; (2)VDGR Drain-gate Voltage (RGS = 20 kW): 60 V; (3)VGS Gate- source Voltage: ± 16 V; (4)ID Drain Current (continuous)at TC = 25℃: 55A; (5)ID Drain Current (continuous)at TC = 100℃: 39A; (6)IDM (l)Drain Current (pulsed): 220A; (7)PTOT Total Dissipation at TC = 25℃: 95W; (8)dv/dt (2)Peak Diode Recovery voltage slope: 20 V/ns; (9)EAS (1)Single Pulse Avalanche Energy: 300 mJ; (10)VISO Insulation Withstand Voltage (DC): 2500 V; (11)Tstg Storage Temperature: – 55 to 175 ℃; (12)Tj Max. Operating Junction Temperature: - 55 to 175 ℃.
Features
STB55NF06L features: (1)typical RDS(on)= 0.014W; (2)exceptional dv/dt capability; (3)application oriented characterization.
Diagrams
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 STB55NF06L |
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Data Sheet |
Negotiable |
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STB55NF06L-1 |
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Negotiable |
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STB55NF06LT4 |
STMicroelectronics |
MOSFET N-Ch 60 Volt 55 Amp |
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