Product Summary

The K6X0808C1D-BF70 is a 32Kx8 bit low power CMOS Static RAM. The K6X0808C1D-BF70 is fabricated by SAMSUNG advanced CMOS process technology. The K6X0808C1D-BF70 supports verious operating temperature ranges and have various package types for user flexibility of system design. The K6X0808C1D-BF70 also supports low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6X0808C1D-BF70 absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN,VOUT: -0.5 to VCC+0.5V(Max. 7.0V)V; (2)Voltage on Vcc supply relative to Vss VCC: -0.3 to 7.0 V; (3)Power Dissipation PD: 1.0 W; (4)Storage temperature TSTG: -65 to 150 ℃; (5)Operating Temperature TA: -40 to 85 ℃.

Features

K6X0808C1D-BF70 features: (1)Process Technology: Full CMOS; (2)Organization: 32K x 8; (3)Power Supply Voltage: 4.5~5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R.

Diagrams

K6X0808C1D-BF70 pin connection

K6X0808C1D-F
K6X0808C1D-F

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K6X0808C1D-Q
K6X0808C1D-Q

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K6X0808T1D-Q
K6X0808T1D-Q

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K6X0808T1D-F
K6X0808T1D-F

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K6X0808T1D-B
K6X0808T1D-B

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